RANDOM DOPANT THRESHOLD VOLTAGE FLUCTUATIONS IN 50 NM EPITAXIAL CHANNEL MOSFETS: A 3D 'ATOMOC' SIMULATION STUDY RANDOM DOPANT THRESHOLD VOLTAGE FLUCTUATIONS IN 50 NM EPITAXIAL CHANNEL MOSFETS: A 3D 'ATOMOC' SIMULATION STUDY
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
July 18, 2022