VARIATION DES PARAMETRES ELECTRIQUES D'UNE TECHNOLOGIE CMOS/SOS A DEPLETION PROFONDE APRES IRRADIATION GAMMA JUSQU'A 3 M RADS (SI). VARIATION DES PARAMETRES ELECTRIQUES D'UNE TECHNOLOGIE CMOS/SOS A DEPLETION PROFONDE APRES IRRADIATION GAMMA JUSQU'A 3 M RADS (SI).
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
July 25, 2022