MAGNETIC FIELD INDUCED LOCALISATION AND METAL INSULATOR TRANSITION IN N-TYPE SI-DOPED MBE GAAS. MAGNETIC FIELD INDUCED LOCALISATION AND METAL INSULATOR TRANSITION IN N-TYPE SI-DOPED MBE GAAS.
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
July 25, 2022