GROWTH AND CHARACTERIZATION OF IN(SUB 0.2)GA(SUB 0.8)SB DEVICE STRUCTURES USING METALORGANIC VAPOR PHASE EPITAXY. GROWTH AND CHARACTERIZATION OF IN(SUB 0.2)GA(SUB 0.8)SB DEVICE STRUCTURES USING METALORGANIC VAPOR PHASE EPITAXY.
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
August 22, 2022