EFFECT OF RECOILED O ON DAMAGE REGROWTH AND ELECTRICAL PROPERTIES OF THROUGH-OXIDE IMPLANTED SI. EFFECT OF RECOILED O ON DAMAGE REGROWTH AND ELECTRICAL PROPERTIES OF THROUGH-OXIDE IMPLANTED SI.
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
August 29, 2022