Comparison of low temperature photoluminescence of bulk MBE (Molecular Beam Epitaxy) grown AlGaAs and GaAs using a graphite generated dimer versus a standard tetramer arsenic group-V source Comparison of low temperature photoluminescence of bulk MBE (Molecular Beam Epitaxy) grown AlGaAs and GaAs using a graphite generated dimer versus a standard tetramer arsenic group-V source
Data source
Japan Atomic Energy Agency's Library Catalog
A search system for the collections of the Japan Atomic Energy Agency central library. Books, reports, meeting materials, magazines and dockets collected by the library are searchable.
Last updated
September 20, 2022